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ZXMN6A09K
60V N-CHANNEL ENHANCEMENT MODE MOSFET IN D-PAK
SUMMARY V(BR)DSS =60V : RDS(on)=0.045 ; ID=11.2A DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * D-Pak (T0-252) package
DPAK
APPLICATIONS
* DC-DC Converters * Power Management functions * Disconnect switches * Motor control
ORDERING INFORMATION
DEVICE ZXMN6A09KTC REEL SIZE 13" TAPE WIDTH 16mm QUANTITY PER REEL 2500 units
PINOUT
DEVICE MARKING
* ZXMN
6A09K
TOP VIEW
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SEMICONDUCTORS
ZXMN6A09K
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-source voltage Gate-source voltage Continuous drain current @ V GS =10V; T A =25C
(b)
SYMBOL V DSS V GS ID @ V GS =10V; T A =70C (b) @ V GS =10V; T A =25C (a)
(c) (b)
LIMIT 60 20 11.2 9.0 7.3
UNIT V V A
Pulsed drain current
I DM IS I SM PD PD PD T j , T stg
40 10.8 40 4.3 34.4 10.1 80.8 2.15 17.2 -55 to +150
A A A W mW/C W mW/C W mW/C C
Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Power dissipation at T A =25C (d) Linear derating factor
Operating and storage temperature range
THERMAL RESISTANCE
PARAMETER Junction to ambient (a) Junction to ambient (b) Junction to ambient
(d)
SYMBOL R JA R JA R JA
VALUE 29 12.3 58
UNIT C/W C/W C/W
NOTES (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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TYPICAL CHARACTERISTICS
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ZXMN6A09K
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1) V (BR)DSS I DSS I GSS V GS(th) R DS(on) 1.0 0.045 0.070 Forward transconductance (1) (3) DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
60 1 100
V A nA V
I D = 250 A, V GS =0V V DS = 60V, V GS =0V V GS =20V, V DS =0V I D = 250 A, V DS =V GS V GS = 10V, I D = 7.3A V GS = 4.5V, I D = 5.6A
g fs
15
S
V DS = 15V, I D = 7.3A
Input capacitance Output capacitance Reverse transfer capacitance SWITCHING
(2) (3)
C iss C oss C rss
1426 134 64
pF pF pF V DS = 30V, V GS =0V f=1MHz
Turn-on-delay time Rise time Turn-off delay time Fall time Total gate charge
t d(on) tr t d(off) tf Qg Qg Q gs Q gd
4.8 4.6 32.5 14.5 15
ns ns ns ns nC VDS = 30V, VGS = 4.5V I D = 5.6A V DS = 30V, V GS = 10V I D = 7.3A V DD = 30V, I D = 1A R G 6.0 , V GS = 10V (refer to test circuit)
Total gate charge Gate-source charge Gate drain charge SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge
NOTES (1) Measured under pulsed conditions. Pulse width (3)
29 7.0 4.7
nC nC nC
V SD t rr Q rr
0.85 25.6 26.0
0.95
V ns nC
T j =25C, I S = 6.6A, V GS =0V T j =25C, I S = 3A, di/dt=100A/ s
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
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TYPICAL CHARACTERISTICS
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TYPICAL CHARACTERISTICS
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ZXMN6A09K
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters DIM Min A A1 b b2 b3 c c2 D D1 E E1 0.635 0.762 5.20 0.457 0.457 5.97 5.20 6.35 4.32 6.73 2.18 Max 2.38 0.127 0.89 1.114 5.46 0.609 0.584 6.22 0.025 0.030 0.205 0.018 0.018 0.235 0.205 0.250 0.170 0.265 Min 0.086 Max 0.094 0.005 0.035 0.045 0.215 0.024 0.023 0.245 e H L L1 L2 L3 L4 L5 1 Inches DIM Min Max Min Max 2.30 BSC 9.40 1.40 10.41 1.78 0.090 BSC 0.370 0.055 0.410 0.070 Millimeters Inches
2.74 REF 0.051 BSC 0.89 0.635 1.14 0 0 1.27 1.01 1.52 10 15
0.108 REF 0.020 BSC 0.035 0.025 0.045 0 0 0.050 0.040 0.060 10 15
(c) Zetex plc 2003
Corporate Headquaters Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Regional sales offices Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to
www.zetex.com
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SEMICONDUCTORS

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